Principal GaN Process Development Engineer

Principal GaN Process Development Engineer (Germany) Attractive salary and comprehensive benefits package Join a leading team in semiconductor technology, focusing on the development of cutting:edge solutions in GaN and other Wide Band Gap semiconductors.

Key Responsibilities: Innovate and develop new processes for GaN and Wide Band Gap semiconductor technologies.

Lead the design and implementation of advanced process flows and device architectures.

Shape the future by contributing to strategic roadmaps and technology development.

Provide technical support and maintain strong communication with customers.

Collaborate with cross:functional teams to drive innovative solutions.

Coordinate partnerships with internal teams and external stakeholders.

Work closely with Site Management, Process and Equipment Engineering, Quality, and Product Marketing.

Requirements: A proven leader, capable of taking initiative and knowing when to delegate to team members.

A degree in a related field, with a minimum of 8 years' experience in GaN/Wide Band Gap device and process development.

Extensive experience in the material science, development, simulation, characterization, and processing of GaN devices.

Strong customer:focus, with expertise in managing customer communications.

Ability to quickly understand complex technical scenarios and adapt to new challenges.

Strong interdisciplinary communication skills.

A collaborative mindset, thriving in multicultural team environments to drive shared success.

This is an exciting opportunity to be at the forefront of semiconductor technology innovation.

Apply now to make a significant impact